IRF5305 Datasheet | Specifications & PDF Download

PD - 91385B IRF5305 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-C

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology

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PD - 91386C IRF5305S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operat

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Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel G Fully Avalanche Rated Lead-Free Descri

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PD - 95957 IRF5305S/LPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 4/21/05 IRF5305S/LPbF 2 www.irf.com IRF5305S/LPbF www.irf.com 3 IRF5

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isc P-Channel MOSFET Transistor IRF5305,IIRF5305 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.06Ω ·Enhancement mode: ·100% avalanche test

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PD - 95957 IRF5305S/LPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 4/21/05 IRF5305S/LPbF 2 www.irf.com IRF5305S/LPbF www.irf.com 3 IRF5

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PD - 91386C IRF5305S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operat

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology

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