IRF7309 Datasheet | Specifications & PDF Download

PD - 9.1243B PRELIMINARY IRF7309 N-CHANNEL MOSFET 1 8 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosf

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  Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dual N and P Channel MOSFET  Dynamic dv/dt Rating  150°C Oper

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VDS RDS(on) max (@VGS = 10V) Qg (max) ID (@TA = 25°C) N-CH 30 0.05 25 4.0 P-CH -30 0.10 25 -3.0 V V Ω nC A IRF7309TRPbF-1 HEXFET® Power MOSFET SO-

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PD - 96135A l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C

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• Lead-Free Description PD - 96086 IRF7309IPbF www.irf.com 1 07/07/06 IRF7309IPbF 2 www.irf.com IRF7309IPbF www.irf.com 3 IRF7309IPbF 4 ww

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PD - 97655A AUTOMOTIVE GRADE Features l l l l l l l l AUIRF7309Q HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 6 5 Advanced Planar

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