IRF742 Datasheet | Specifications & PDF Download

IRF7425TR-VB IRF7425TR-VB Datasheet P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.011 at VGS = - 10 V 0.015 at VGS = -

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF742 DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Vol

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VDS RDS(on) max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) Qg (typical) ID (@TA = 25°C) -20 V 8.2 mΩ 13 87 nC -15 A IRF7425PbF S 1 S 2 S

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PD- 94024A IRF7424 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS -30V RDS(on)

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IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40 N-Channel Power MOSFETs 10A, 350V/400V Description These devices are n-channel, enhancement mode, power MO

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www.DataSheet4U.com PD- 95304 IRF7421D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For S

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www.DataSheet4U.com PD 9.1411 PRELIMINARY l l l l IRF7421D1 MOSFET & Schottky Diode 8 Co-packaged Power MOSFET and Schottky Diode Ideal For Synchr

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www.DataSheet4U.com PD - 94278 IRF7420 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel

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VDS RDS(on) max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) Qg (typical) ID (@TA = 25°C) -20 V 8.2 mΩ 13 87 nC -15 A IRF7425PbF HEXFET® Power MOSFET

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VDS RDS(on) max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) RDS(on) max (@VGS = -1.8V) Qg (typical) ID (@TA = 25°C) -12 V 14 mΩ 17.5 mΩ 26 38 -11.5

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PD- 91412M IRF7422D2 l Co-packaged HEXFET® Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET l Low VF Schot

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• Lead-Free PD - 95310 IRF7422D2PbF www.irf.com 1 10/13/04 IRF7422D2PbF 2 www.irf.com IRF7422D2PbF www.irf.com 3 IRF7422D2PbF 4 www.irf.com I

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l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free VDSS -12V PD - 95633A IRF7420PbF HEXFET® Power M

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l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free VDSS -30V PD- 95343 IRF7424PbF HEXFET® Power MOS

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VDS RDS(on) max (@VGS = -4.5V) RDS(on) max (@VGS = -2.5V) Qg (typical) ID (@TA = 25°C) -20 V 8.2 mΩ 13 87 nC -15 A Features Industry-standard pinout

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~D~[F~lf FIELD EFFECT POWER TRANSISTOR IRF742,743 SAMPERES 400, 350 VOLTS ROS(ON) =O.SO n This series of N-Channel Enhancement-mode Power MOSFETs ut

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