IRF840A Datasheet | Specifications & PDF Download

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende

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IRF840A Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A Drain D Gate Drain Source N Channel G Symbol S ELECTRICAL CHARACTERISICS at T

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SEMICONDUCTOR IRF840 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (8A, 500Volts) DESCRIPTION The Nell IRF840 are N-Channel enhan

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PD- 91900A SMPS MOSFET IRF840A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed po

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PD- 91901B SMPS MOSFET IRF840AS IRF840AL HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Sp

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IRF840AS/AL Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A Mechanical Dimensions Case SMB 220 Plastic DIMENSIONS Millimetres Inches Dim

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Power MOSFET IRF840A, SiHF840A Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V

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PD- 91901B SMPS MOSFET IRF840AS IRF840AL HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Sp

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IRF840AS, SiHF840AS, IRF840AL, SiHF840AL www.vishay.com Vishay Siliconix Power MOSFET I2PAK (TO-262) D2PAK (TO-263) D G SD G D G S S N-Ch

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IRF840AS, SiHF840AS, IRF840AL, SiHF840AL www.vishay.com Vishay Siliconix Power MOSFET I2PAK (TO-262) D2PAK (TO-263) D G SD G D G S S N-Ch

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·Fast Sw

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IRF840AS/AL Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A Mechanical Dimensions Case SMB 220 Plastic DIMENSIONS Millimetres Inches Dim

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