IRFR120 Datasheet | Specifications & PDF Download

IRFR120, IRFU120 Data Sheet January 2002 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs www.datasheet4u.com These are N-Channel enhancement mode sili

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www.vishay.com IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G S G GD S S N-Channel MOS

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Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up

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isc N-Channel MOSFET Transistor IRFR1205, IIRFR1205 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤27mΩ ·Enhancement mode: ·100% avalanche te

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IRFR120NTRPBF www.VBsemi.com IRFR120NTRPBF N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 15 T

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PD - 91365B IRFR/U120N HEXFET® Power MOSFET l l l l l Surface Mount (IRFR120N) Straight Lead (IRFU120N) Advanced Process Technology Fast Switching F

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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PD - 91318B IRFR/U1205 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount (IRFR1205) Straight Lead (IRFU1205) Fast Switching Fully

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PD - 95600A IRFR/U1205PbF • Lead-Free www.irf.com 1 12/9/04 http://www.Datasheet4U.com IRFR/U1205PbF 2 www.irf.com http://www.Datasheet4U.co

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PD - 96345 AUTOMOTIVE MOSFET Features l l l l l l l AUIRFR120Z AUIRFU120Z HEXFET® Power MOSFET V(BR)DSS 100V RDS(on) typ. 150mΩ 190mΩ 8.7A D Advanc

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AUTOMOTIVE MOSFET Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalan

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isc N-Channel MOSFET Transistor IRFR120N, IIRFR120N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤210mΩ ·Enhancement mode: ·100% avalanche t

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• Lead-Free PD - 95067A IRFR/U120NPbF www.irf.com 1 12/9/04 IRFR/U120NPbF 2 www.irf.com IRFR/U120NPbF www.irf.com 3 IRFR/U120NPbF 4 www.ir

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isc N-Channel MOSFET Transistor IRFR120Z, IIRFR120Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤190mΩ ·Enhancement mode: ·100% avalanche t

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  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avala

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IRFR120, IRFU120 Data Sheet July 1999 File Number 2414.2 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon

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• Lead-Free PD - 95067A IRFR/U120NPbF www.irf.com 1 12/9/04 IRFR/U120NPbF 2 www.irf.com IRFR/U120NPbF www.irf.com 3 IRFR/U120NPbF 4 www.ir

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