IRFZ48 Datasheet | Specifications & PDF Download

AUTOMOTIVE GRADE PD - 97732 AUIRFZ48N Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperatur

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

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Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standa

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PD - 97612A AUTOMOTIVE GRADE Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching

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PD - 93959A IRFZ48V HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temp

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PD - 9.1408B Advanced Process Technology Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switchin

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PD - 94992A IRFZ48VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Swi

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www.vishay.com IRFZ48 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 VGS = 10 V Q

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 35mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lo

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PD - 94763 AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperatu

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PD - 94051A IRFZ48VS HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Tem

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PD - 95573 IRFZ48VSPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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PD - 94074 HEXFET® Power MOSFET l l l l l l IRFZ48RS IRFZ48RL VDSS = 60V Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperatu

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFZ48V， IIRFZ48V ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mo

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l l l l l l l Description Advanced Process Technology Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast

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l l l l l l l Description Advanced Process Technology Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFZ48Z， IIRFZ48Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mo

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PD - 94074 HEXFET® Power MOSFET l l l l l l IRFZ48RS IRFZ48RL VDSS = 60V Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperatu

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Isc N-Channel MOSFET Transistor IRFZ48ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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