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IRGBC30MD2 - INSULATED GATE BIPOLAR TRANSISTOR
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Previous Datasheet Index Next Data Sheet PD - 9.1133 IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V.IRGBC30MD2-S - INSULATED GATE BIPOLAR TRANSISTOR
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