Datasheet4U Logo Datasheet4U.com

IRGBC30M Datasheet - International Rectifier

IRGBC30M - INSULATED GATE BIPOLAR TRANSISTOR

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

They provide substantial benefits to a host of high-voltage, h

IRGBC30M Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V

* Switching-loss rating includes all "tail" losses

* Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 2.9V @VGE = 15V,

IRGBC30M_InternationalRectifier.pdf

Preview of IRGBC30M PDF
IRGBC30M Datasheet Preview Page 2 IRGBC30M Datasheet Preview Page 3

Datasheet Details

Part number:

IRGBC30M

Manufacturer:

International Rectifier

File Size:

181.73 KB

Description:

Insulated gate bipolar transistor.

📁 Related Datasheet

📌 All Tags