Part number:
IRGBC30M
Manufacturer:
International Rectifier
File Size:
181.73 KB
Description:
Insulated gate bipolar transistor.
IRGBC30M_InternationalRectifier.pdf
Datasheet Details
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, h
IRGBC30M Features
* Short circuit rated - 10µs @ 125°C, V GE = 15V
* Switching-loss rating includes all "tail" losses
* Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 2.9V @VGE = 15V,
IRGBC30M_InternationalRectifier.pdf
Datasheet Details
IRGBC30M
International Rectifier
181.73 KB
Insulated gate bipolar transistor.
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