IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

Previous Datasheet Index Next Data Sheet PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line.

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Datasheet Specifications

Part number: IRGBC30MD2-S
Manufacturer: International Rectifier
File Size: 310.46 KB
Datasheet: IRGBC30MD2-S_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Short circuit rated -10µs @125°C, V GE = 15V
* Switching-loss rating includes all "tail" losses TM
* HEXFRED soft ultrafast diodes
* Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated Fast CoPack

Applications

* These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. SMD-220 Absolute Maximum Ratings www. DataSheet4U. com Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM tsc VGE PD @ T C = 2

IRGBC30MD2-S Distributors

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IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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