IRGBC30M-S Datasheet - International Rectifier

IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGBC30M-S Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V

* Switching-loss rating includes all "tail" losses

* Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 2.9V @VGE = 15V,

IRGBC30M-S_InternationalRectifier.pdf