IRGBC30M-S

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

IRGBC30M-S Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V

* Switching-loss rating includes all "tail" losses

* Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 2.9V @VGE = 15V,

IRGBC30M-S General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGBC30M-S Datasheet (187.03 KB)

IRGBC30M-S Datasheet Preview — Preview of IRGBC30M-S PDF

Datasheet Details

Part number:

IRGBC30M-S

Manufacturer:

International Rectifier

File Size:

187.03 KB

Description:

Insulated gate bipolar transistor.

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IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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IRGBC30M-S Features

IRGBC30M-S General Description

Datasheet Details

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