IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

Previous Datasheet Index Next Data Sheet PD - 9.1133 IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR .
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

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Datasheet Specifications

Part number: IRGBC30M-S
Manufacturer: International Rectifier
File Size: 187.03 KB
Datasheet: IRGBC30M-S_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V
* Switching-loss rating includes all "tail" losses
* Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 2.9V @VGE = 15V,

Applications

* These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. www. DataSheet4U. com SMD-220 Max. 600 26 16 52 52 10 ±20 10 100 42 -55 to +150 Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C

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IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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