IRGBC30F

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

IRGBC30F Features

* Switching-loss rating includes all "tail" losses

* Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 2.1V @VGE = 15V, I C = 17A n-channel Description Insulated Gate Bipolar Transistors (

IRGBC30F General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGBC30F Datasheet (180.73 KB)

IRGBC30F Datasheet Preview — Preview of IRGBC30F PDF

Datasheet Details

Part number:

IRGBC30F

Manufacturer:

International Rectifier

File Size:

180.73 KB

Description:

Insulated gate bipolar transistor.

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IRGBC30F INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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IRGBC30F Features

IRGBC30F General Description

Datasheet Details

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