IRGBC30F Datasheet, Transistor, International Rectifier

IRGBC30F Features

  • Transistor
  • Switching-loss rating includes all "tail" losses
  • Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed

PDF File Details

Part number:

IRGBC30F

Manufacturer:

International Rectifier

File Size:

180.73kb

Download:

📄 Datasheet

Description:

Insulated gate bipolar transistor. Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar

Datasheet Preview: IRGBC30F 📥 Download PDF (180.73kb)
Page 2 of IRGBC30F Page 3 of IRGBC30F

IRGBC30F Application

  • Applications www.DataSheet4U.com TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25

TAGS

IRGBC30F
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

📁 Related Datasheet

IRGBC30FD2 - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
Previous Datasheet Index Next Data Sheet PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Swi.

IRGBC30K - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all.

IRGBC30K-S - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
Previous Datasheet Index Next Data Sheet PD - 9.1132 IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V.

IRGBC30KD2 - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 9.1107 IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10µs @125°C, VGE = 15V • .

IRGBC30M - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
Previous Datasheet Index Next Data Sheet PD - 9.1072 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V G.

IRGBC30M-S - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
Previous Datasheet Index Next Data Sheet PD - 9.1133 IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V.

IRGBC30MD2 - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
Previous Datasheet Index Next Data Sheet PD - 9.1108 IRGBC30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Sh.

IRGBC30MD2-S - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
Previous Datasheet Index Next Data Sheet PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • .

IRGBC30S - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 9.688A IRGBC30S INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all tail losses • Optimized for line frequency ope.

IRGBC30U - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all tail losses • Optimized for high operating fre.

Stock and price

part
Infineon Technologies AG
IGBT 600V 31A TO-220AB
DigiKey
IRGBC30F
0 In Stock
Qty : 50 units
Unit Price : $2.65
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts