Part number:
IRGBC30K-S
Manufacturer:
International Rectifier
File Size:
186.30 KB
Description:
Insulated gate bipolar transistor.
IRGBC30K-S_InternationalRectifier.pdf
Datasheet Details
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, h
IRGBC30K-S Features
* Short circuit rated - 10µs @ 125°C, V GE = 15V
* Switching-loss rating includes all "tail" losses
* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated UltraFast Fast IGBT VCES = 600V VCE(sat) ≤ 3.8V @VGE
IRGBC30K-S_InternationalRectifier.pdf
Datasheet Details
IRGBC30K-S
International Rectifier
186.30 KB
Insulated gate bipolar transistor.
📁 Related Datasheet
📌 All Tags