IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

Previous Datasheet Index Next Data Sheet PD - 9.1132 IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR .
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

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Datasheet Specifications

Part number: IRGBC30K-S
Manufacturer: International Rectifier
File Size: 186.30 KB
Datasheet: IRGBC30K-S_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V
* Switching-loss rating includes all "tail" losses
* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated UltraFast Fast IGBT VCES = 600V VCE(sat) ≤ 3.8V @VGE

Applications

* These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. www. DataSheet4U. com SMD-220 Max. 600 23 14 46 46 10 ±20 10 100 42 -55 to +150 Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C

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IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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