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IRGBC30K-S Datasheet - International Rectifier

IRGBC30K-S - INSULATED GATE BIPOLAR TRANSISTOR

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

They provide substantial benefits to a host of high-voltage, h

IRGBC30K-S Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V

* Switching-loss rating includes all "tail" losses

* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated UltraFast Fast IGBT VCES = 600V VCE(sat) ≤ 3.8V @VGE

IRGBC30K-S_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGBC30K-S

Manufacturer:

International Rectifier

File Size:

186.30 KB

Description:

Insulated gate bipolar transistor.

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