IRGBC30K Datasheet - International Rectifier

IRGBC30K, INSULATED GATE BIPOLAR TRANSISTOR

PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR .
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

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IRGBC30K_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGBC30K

Manufacturer:

International Rectifier

File Size:

114.90 KB

Description:

INSULATED GATE BIPOLAR TRANSISTOR

Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V
* Switching-loss rating includes all "tail" losses
* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.8V @VGE = 15

Applications

* These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. www. DataSheet4U. com TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 1

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IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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