IRGBC30K Datasheet - International Rectifier

IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGBC30K Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V

* Switching-loss rating includes all "tail" losses

* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.8V @VGE = 15

IRGBC30K_InternationalRectifier.pdf