Datasheet4U Logo Datasheet4U.com

IRGBC30K Datasheet - International Rectifier

IRGBC30K - INSULATED GATE BIPOLAR TRANSISTOR

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

They provide substantial benefits to a host of high-voltage, h

IRGBC30K Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V

* Switching-loss rating includes all "tail" losses

* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.8V @VGE = 15

IRGBC30K_InternationalRectifier.pdf

Preview of IRGBC30K PDF
IRGBC30K Datasheet Preview Page 2 IRGBC30K Datasheet Preview Page 3

Datasheet Details

Part number:

IRGBC30K

Manufacturer:

International Rectifier

File Size:

114.90 KB

Description:

Insulated gate bipolar transistor.

📁 Related Datasheet

📌 All Tags