Part number:
IRGBC30K
Manufacturer:
International Rectifier
File Size:
114.90 KB
Description:
Insulated gate bipolar transistor.
IRGBC30K_InternationalRectifier.pdf
Datasheet Details
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, h
IRGBC30K Features
* Short circuit rated - 10µs @ 125°C, V GE = 15V
* Switching-loss rating includes all "tail" losses
* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.8V @VGE = 15
IRGBC30K_InternationalRectifier.pdf
Datasheet Details
IRGBC30K
International Rectifier
114.90 KB
Insulated gate bipolar transistor.
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