IRGSL30B60K Datasheet | Specifications & PDF Download

AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR Features  Low VCE (on) Non Punch Through IGBT Technology  10µs Short

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PD - 94799 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60K IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C Features • • • • • Low

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PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE(on) Non Punch Through IGBT Technology • 10µs Short Cir

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PD - 97003 INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF Features • Low VCE (on) Non Punch Through IGBT Technology •

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