IRGSL30B60KPbF, IRGS30B60KPBF Datasheet - International Rectifier

IRGSL30B60KPbF Insulated Gate Bipolar Transistor

IRGSL30B60KPbF Features

* Low VCE (on) Non Punch Through IGBT Technology

* 10µs Short Circuit Capability

* Square RBSOA

* Positive VCE (on) Temperature Coefficient

* Maximum Junction Temperature rated at 175°C

* Lead-Free C G E n-channel VCES = 600V IC = 50A, TC=100°C at TJ

Datasheet Details

IRGSL30B60KPbF, IRGS30B60KPBF

International Rectifier

377.68 KB

Insulated gate bipolar transistor.

This datasheet PDF includes multiple part numbers: IRGSL30B60KPbF, IRGS30B60KPBF.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGSL10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGSL14C40L INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGSL14C40LPBF IGBT (International Rectifier)

IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGSL4062DPBF Power MOSFET (International Rectifier)

TAGS

IRGSL30B60KPbF Distributor