IRGSL30B60KPbF Datasheet - International Rectifier

IRGSL30B60KPbF Insulated Gate Bipolar Transistor

IRGSL30B60KPbF Features

* Low VCE (on) Non Punch Through IGBT Technology

* 10µs Short Circuit Capability

* Square RBSOA

* Positive VCE (on) Temperature Coefficient

* Maximum Junction Temperature rated at 175°C

* Lead-Free C G E n-channel VCES = 600V IC = 50A, TC=100°C at TJ

Datasheet Details

IRGSL30B60KPbF

International Rectifier

377.68 KB

Insulated gate bipolar transistor.

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