IRGSL10B60KD - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 94382D
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB10B60KD IRGS10B60KD IRGSL10B60KD
VCES = 600V IC = 12A, TC=100.
IRGSL14C40L - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 93891A
Ignition IGBT
Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-cla.
IRGSL14C40LPBF - IGBT
(International Rectifier)
PD - 95193A
Ignition IGBT
Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Sel.
IRGSL15B60KD - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 94383D
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB15B60KD IRGS15B60KD IRGSL15B60KD
VCES = 600V IC = 15A, TC=100.
IRGSL15B60KDPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 95194A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Dio.
IRGSL30B60K - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
PD - 94799
INSULATED GATE BIPOLAR TRANSISTOR
C
IRGB30B60K IRGS30B60K IRGSL30B60K
VCES = 600V IC = 50A, TC=100°C at TJ=175°C
Features
• • • • • Low .