* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Lead-Free G E tsc > 10µs, TJ
IRGSL10B60KDPBF Datasheet (391.96 KB)
IRGSL10B60KDPBF
International Rectifier
391.96 KB
Insulated gate bipolar transistor.
PD - 94925A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF VCES = 600V IC = 12.
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