IRGSL10B60KDPBF Datasheet - International Rectifier

IRGSL10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGSL10B60KDPBF Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* Lead-Free G E tsc > 10µs, TJ

Datasheet Details

IRGSL10B60KDPBF

International Rectifier

391.96 KB

Insulated gate bipolar transistor.

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