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IRGSL15B60KDPbF, IRGB15B60KDPbF Datasheet - International Rectifier

IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR

IRGSL15B60KDPbF Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* Lead-Free C IRGB15B60KDPbF IR

IRGB15B60KDPbF_InternationalRectifier.pdf

This datasheet PDF includes multiple part numbers: IRGSL15B60KDPbF, IRGB15B60KDPbF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IRGSL15B60KDPbF, IRGB15B60KDPbF

Manufacturer:

International Rectifier

File Size:

824.04 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IRGSL15B60KDPbF, IRGB15B60KDPbF.
Please refer to the document for exact specifications by model.

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IRGSL15B60KDPbF IRGB15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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