IRGSL10B60KD Datasheet - International Rectifier

IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR

IRGSL10B60KD Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits

Datasheet Details

IRGSL10B60KD

International Rectifier

327.20 KB

Insulated gate bipolar transistor.

📁 Related Datasheet

IRGSL10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGSL14C40L INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGSL14C40LPBF IGBT (International Rectifier)

IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGSL30B60KPbF Insulated Gate Bipolar Transistor (International Rectifier)

IRGSL4062DPBF Power MOSFET (International Rectifier)

TAGS

IRGSL10B60KD Distributor