* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits
IRGSL10B60KD Datasheet (327.20 KB)
IRGSL10B60KD
International Rectifier
327.20 KB
Insulated gate bipolar transistor.
PD - 94382D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = 600V IC = 12A, TC=100.
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