IRGSL14C40LPBF

IGBT

International Rectifier

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Infineon Technologies AG	IRGSL14C40LPBF	IGBT 430V 20A TO-262	DigiKey	0	0	$0	🛒 Buy Now

Download Datasheet (314.52 KB)

IRGSL14C40LPBF Datasheet Preview — Preview of IRGSL14C40LPBF Datasheet

Datasheet Details

Part number:

IRGSL14C40LPBF

Manufacturer:

International Rectifier

File Size:

314.52 KB

Description:

Igbt.
PD - 95193A Ignition IGBT Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD G.
The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intende.

✔ IRGSL14C40LPBF Features

Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy Lead-Free Descrip

✔ IRGSL14C40LPBF Application

and small-engine ignition circuits. Unique features include on-chip active voltage clamps between the Gate-E

📁 Related Datasheet

IRGSL14C40L - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 93891A Ignition IGBT Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-cla.

IRGSL10B60KD - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 94382D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = 600V IC = 12A, TC=100.

IRGSL10B60KDPBF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 94925A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF VCES = 600V IC = 12.

IRGSL15B60KD - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 94383D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB15B60KD IRGS15B60KD IRGSL15B60KD VCES = 600V IC = 15A, TC=100.

IRGSL15B60KDPbF - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 95194A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Dio.

IRGSL30B60K - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
PD - 94799 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60K IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C Features • • • • • Low .

TAGS

IRGSL14C40LPBF IGBT International Rectifier

Image Gallery