IRGSL30B60K Features
* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits
IRGB30B60K_InternationalRectifier.pdf
Datasheet Details
IRGSL30B60K, IRGB30B60K
International Rectifier
354.36 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGSL30B60K, IRGB30B60K.
Please refer to the document for exact specifications by model.
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IRGSL30B60K Distributor
