IRL520 Datasheet | Specifications & PDF Download

Power MOSFET IRL520L, SiHL520L Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 1

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isc N-Channel MOSFET Transistor IRL520N，IIRL520N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.18Ω ·Enhancement mode ·Fast Switching Spee

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PD - 91494A IRL520N HEXFET® l l l l l l Power MOSFET VDSS = 100V Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Oper

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$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende

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www.DataSheet4U.com PD - 91534 IRL520NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL520NS) l Low-profile through-hole

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www.vishay.com IRL520 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 5.0

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www.DataSheet4U.com PD - 91534 IRL520NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL520NS) l Low-profile through-hole

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• Lead-Free PD- 95592 IRL520NSPbF IRL520NLPbF www.irf.com 1 07/21/04 IR520NS/LPbF 2 www.irf.com IRL520NS/LPbF www.irf.com 3 IR520NS/LPbF 4 www

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• Lead-Free PD- 95592 IRL520NSPbF IRL520NLPbF www.irf.com 1 07/21/04 IR520NS/LPbF 2 www.irf.com IRL520NS/LPbF www.irf.com 3 IR520NS/LPbF 4 www

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• Lead-Free PD- 95668 IRL520NPbF www.irf.com 1 8/2/04 IRL520NPbF 2 www.irf.com IRL520NPbF www.irf.com 3 IRL520NPbF 4 www.irf.com IRL520NPbF

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Isc N-Channel MOSFET Transistor IRL520NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

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isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 180mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalan

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$GYDQFHG 3RZHU 026)(7 IRL520S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge

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Power MOSFET IRL520S, SiHL520S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 1

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