.
Inchange Semiconductor
35
BD243 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS).
Inchange Semiconductor
24
BD243C - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS).
Inchange Semiconductor
22
BD202 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor BD202/204 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD202 -60V(Min)- BD204 ·Complem.
Inchange Semiconductor
14
BD263 - Silicon NPN Power Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ I.
Inchange Semiconductor
13
BD235 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD.
Inchange Semiconductor
10
BD203 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BD201/203 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201 60V(Min)- BD203 ·Complemen.
Inchange Semiconductor
9
BD201 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BD201/203 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201 60V(Min)- BD203 ·Complemen.
Inchange Semiconductor
8
BD243A - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS).
Inchange Semiconductor
7
BD204 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor BD202/204 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD202 -60V(Min)- BD204 ·Complem.
Inchange Semiconductor
7
BD245D - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE>40@IC = 1A ·Collector-Emitter Saturation Voltage-.
Inchange Semiconductor
6
BD236 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor INCHANGE Semiconductor BD234/236/238 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Complement to Type B.
Inchange Semiconductor
4
BD233 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD.
Inchange Semiconductor
3
BD237 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD.
Inchange Semiconductor
2
BD238 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor INCHANGE Semiconductor BD234/236/238 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Complement to Type B.
Inchange Semiconductor
1
BD234 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor INCHANGE Semiconductor BD234/236/238 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Complement to Type B.
Inchange Semiconductor
1
BD243B - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS).