IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CE MOSFET 600V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,

Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1)

IPS70R600P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

CoolGaNTM Integrated Power Stage (IPS) IGI60F2727A1L 270 m / 600 V GaN half-bridge with fast accurate isolated gate drivers Features • Two 270 m G

ICs for Communications Very High Bitrate Digital Subscriber Line Chipset VDSL-A/-D/-L PEB 22810 Version 2.1 PEB 22811 Version 2.1 PEB 22812 Version 2.

IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to

Automotive grade Automotive IPS Low side AUIPS1025R INTELLIGENT POWER LOW SIDE SWITCH Features  Over temperature shutdown  Over current shutdown

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Type OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate cha

ICs for Communications Very High Bitrate Digital Subscriber Line Chipset VDSL-A/-D/-L PEB 22810 Version 2.1 PEB 22811 Version 2.1 PEB 22812 Version 2.

ICs for Communications Very High Bitrate Digital Subscriber Line Chipset VDSL-A/-D/-L PEB 22810 Version 2.1 PEB 22811 Version 2.1 PEB 22812 Version 2.

IPD09N03LA IPS09N03LA IPF09N03LA IPU09N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to

IPS60R650CE MOSFET 600V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the

Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1)

IPS65R1K0CE MOSFET 650V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the

CoolGaNTM Integrated Power Stage (IPS) IGI60F1414A1L 140 m / 600 V GaN half-bridge with fast accurate isolated gate drivers Features • Two 140 m G

IPD13N03LA IPS13N03LA IPF13N03LA IPU13N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to

OptiMOS®2 Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Produ

Type IPD12N03LB G IPU12N03LB G IPS12N03LB G IPF12N03LB G OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target app