Infrared-Emitting Datasheet | Specifications & PDF Download

www.vishay.com VOM617A Vishay Semiconductors Low Input Current, Phototransistor Output, SOP-4, Mini-Flat Package A1 C2 4C 3E i179089 LINKS TO AD

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Photocoupler PC-17K1 • PC-17K2 • PC-17K4 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor

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GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description The MIE-114A1 is a GaAs infrared emitting diode molded in clear, lensed s

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F5E1/2/3 AlGaAs INFRARED EMITTING DIODE PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) DESCRIPTION The F5E series are 880nm LEDs in a wide angle, TO-46

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Photocoupler K5610 • K5611 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin pac

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Shenzhen Orient Components Co ., Ltd OR-10XX ORIENT Photo coupler Product Data Sheet Part Number: Customer: Date: OR-10XX SHENZHEN ORIENT COMPONE

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Shenzhen Orient Components Co ., Ltd OR-10XX ORIENT Photo coupler Product Data Sheet Part Number: Customer: Date: OR-10XX SHENZHEN ORIENT COMPONE

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P-N GaAs Infrared-Emitting Diode Optoelectronic Products 4-72 TIL38 General Description The TIL38 is a p-n GaAs infrared-emitting diode in a low-cos

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GL4100 GL4100 s Features 1. Compact flat package 2. Wide beam angle Side View and Thin Flat Type Infrared Emitting Diode s Outline Dimensions 3.0 2

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GL514/GL513F GL514/GL513F s Features 1. Output : GL514 Φ e MIN. 3.31mW at I F = 100mA GL513F Φ e MIN. 1.44mW at I F = 100mA 2. Beam angle : GL514 ∆θ

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AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description The MIE-111A1 is a AlGaAs/GaAs infrared emitting diode molded in diffused

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GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description The MIE-114A2 is a GaAs infrared emitting diode molded in clear, lensed side loo

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GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description The MIE-114G1 is a GaAs infrared emitting diode molded in clear , lensed side looking packa

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