JH6 Datasheet | Specifications & PDF Download

Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 Features  Low collector

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MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−spe

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH6282/D Darlington Complementary Silicon Power Transistors . . . designed for genera

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH6282/D Darlington Complementary Silicon Power Transistors . . . designed for genera

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Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) =

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Preliminary Datasheet RJH60D5DPQ-E0 600V - 37A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to em

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MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−spe

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isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor MJH6287 DESCRIPTION ·With TO-3PN packaging ·Very high DC current gain ·Monolithic

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJH6284 DESCRIPTION ·With TO-3PN packaging ·Very high DC current gain ·Monolithi

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH6282/D Darlington Complementary Silicon Power Transistors . . . designed for genera

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RJH60D5DPK Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Prel

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH6282/D Darlington Complementary Silicon Power Transistors . . . designed for genera

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH6282/D Darlington Complementary Silicon Power Transistors . . . designed for genera

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH6282/D Darlington Complementary Silicon Power Transistors . . . designed for genera

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Preliminary Datasheet RJH60D7DPK 600V - 50A - IGBT Application: Inverter R07DS0165EJ0400 Rev.4.00 Apr 19, 2012 Features  Short circuit withstand t

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Thyristors 25 Amp Standard & Alternistor (High Commutation) Triacs Qxx25xx & Qxx25xHx Series RoHS Description This 25 Amp bi-directional solid stat

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RJH65T14DPQ-A0 650V - 50A - IGBT Application: Induction Heating Microwave Oven Features  Optimized for current resonance application  Low collector

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Preliminary Datasheet RJH60D5DPQ-A0 600 V - 37 A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to

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Preliminary Datasheet RJH60V1BDPP-M0 600V - 8A - IGBT Application: Inverter Features  Short circuit withstand time (6 s typ.)  Low collector to em

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