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TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A50D Switching Regulator Applications • • • • Low drain-source ON-re

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MOSFETs Silicon N-Channel MOS (π-MOS) TK12A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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www.DataSheet4U.com TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK12A60U Switching Regulator Applications • • • •

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TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A60D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm

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SERVICE MANUAL LMU-TK12AS(SS) INDUSTRIAL MONITOR PRODUCT CODE No. LMU-TK12AS/SS LMU-TK12AS(K)/SS LMU-TK12ASTR/SS LMU-TK12ASTR(K)/SS LMU-TK12ASTR(K)/UK

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK12A60W,ITK12A60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.265Ω (typ.) ·Easy t

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■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, l

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TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A50D Switching Regulator Applications • • • • Low drain-source ON-re

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TK12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A45D Switching Regulator Applications • Low drain-source ON-resista

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K12A60W-VB K12A60W-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC)

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2 x 1.2mm Auto Grade Tuning Fork  AEC-Q200 Qualified  IATF-16949 QMS K12A DATASHEET STANDARD SPECIFICATIONS PARAMETERS Frequency Frequency Tolera

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MOSFETs Silicon N-Channel MOS (DTMOS) TK12A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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TK12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A53D Switching Regulator Applications • • • • Low drain-source ON-re

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HZK Series Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply ADE-208-126B (Z) Rev. 2 Jul. 1994 Features • Low leakage, low zener imp

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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK12A50D5，ITK12A50D5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.5Ω (typ.) ·Enhance

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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK12A53D，ITK12A53D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.5Ω (typ.) ·Enhanceme

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iscN-Channel MOSFET Transistor TK12A65D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.54Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10

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iscN-Channel MOSFET Transistor TK12A50D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.52Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10

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K12A65D-VB K12A65D-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC)

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TK12A50E MOSFETs Silicon N-Channel MOS (π-MOS) TK12A50E 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-

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