K170 Datasheet | Specifications & PDF Download

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 2SK170 Low Noise Audio Amplifier Applications Unit: mm • Recommended for fi

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 2SK170 Low Noise Audio Amplifier Applications Unit: mm • Recommended for fi

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LSK170 A/B/C/D Quality Through Innovation Since 1987 High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ultra-Low Noise at Both High & Low F

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LSK170 A/B/C/D Quality Through Innovation Since 1987 High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ultra-Low Noise at Both High & Low F

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LSK170 A/B/C/D Quality Through Innovation Since 1987 High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ultra-Low Noise at Both High & Low F

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LSK170 A/B/C/D Quality Through Innovation Since 1987 High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ultra-Low Noise at Both High & Low F

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isc N-Channel MOSFET Transistor IXTK170N10P ·FEATURES ·Drain Current ID=170A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source O

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTT170N10P IXTQ170N10P IXTK170N10P Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA E

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Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK170N20

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LSK170 A/B/C/D Quality Through Innovation Since 1987 High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ultra-Low Noise at Both High & Low F

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isc N-Channel MOSFET Transistor 2SK1700 DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot vari

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TK17010 LOW VOLTAGE OPERATIONAL AMPLIFIER FEATURES s Very Low and Wide Operating Voltage Range (VOP = 1.0 to 7 V) s Very Wide Input Signal Voltage Ran

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I C R O C LOC K Description The MK1704A is an upgraded version of the MK1704 and is recommended for all new designs. It offers more reduction in the f

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MK1707 Low EMI Clock Generator Description The MK1707 generates a low EMI output clock from a clock input. The part is designed to dither the LCD inte

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isc N-Channel MOSFET Transistor 2SK1707 DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·M

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LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Systems replaces discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is an Ultra Low Nois

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ATI LOW EMI CLOCK GENERATOR DATASHEET MK1705A Description The MK1705A generates a low EMI output clock from a clock or crystal input. The part is de

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PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK170N20P IXFX170N20P VDSS = ID25 =  RDS(on) 200

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HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data Symbol Test Conditions VDSS I D25 170A 170A RDS(on) 10mW 10mW trr 200ns 200ns IXFN170N

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isc N-Channel MOSFET Transistor 2SK1704 DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Fast Switching Speed ·Min

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