K170 Datasheet | Specifications & PDF Download

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 2SK170 Low Noise Audio Amplifier Applications Unit: mm • Recommended for fi

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 2SK170 Low Noise Audio Amplifier Applications Unit: mm • Recommended for fi

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MK1707 Low EMI Clock Generator Description The MK1707 generates a low EMI output clock from a clock input. The part is designed to dither the LCD inte

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LSK170 A/B/C/D Quality Through Innovation Since 1987 High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ultra-Low Noise at Both High & Low F

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HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data Symbol Test Conditions VDSS I D25 170A 170A RDS(on) 10mW 10mW trr 200ns 200ns IXFN170N

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LOW EMI CLOCK GENERATOR DATASHEET MK1707 Description The MK1707 generates a low EMI output clock from a clock input. The part is designed to dither

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isc N-Channel MOSFET Transistor 2SK1703 DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot varia

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I C R O C LOC K Description The MK1704A is an upgraded version of the MK1704 and is recommended for all new designs. It offers more reduction in the f

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9&( ,&   9  $ ,*%7 'LH 60;  .  'LH VL]H  [  PP Doc. No. 5SYA1619-01 July 03 • /RZ ORVV WKLQ ,*%7 GLH • +LJKO\ UXJJHG 637 GHVLJQ

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LSK170 A/B/C/D Quality Through Innovation Since 1987 High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ultra-Low Noise at Both High & Low F

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TK17010 LOW VOLTAGE OPERATIONAL AMPLIFIER FEATURES s Very Low and Wide Operating Voltage Range (VOP = 1.0 to 7 V) s Very Wide Input Signal Voltage Ran

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APTGT150SK170G Buck chopper Trench + Field Stop IGBT® Power Module VBUS Q1 G1 VCES = 1700V IC = 150A @ Tc = 80°C Application • AC and DC motor contro

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APTGT150SK170 Buck chopper Trench + Field Stop IGBT® Power Module VBUS Q1 G1 VCES = 1700V IC = 150A @ Tc = 80°C Application • AC and DC motor control

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April 2015 PRODUCT FEATURES □ IGBT3 CHIP(1700V Trench+Field Stop technology) □ Low turn-off losses, short tail current □ VCE(sat) with positive temper

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LSK170 A/B/C/D Quality Through Innovation Since 1987 High Input Impedance, Ultra-Low Noise, Single N-Channel JFET Ultra-Low Noise at Both High & Low F

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isc N-Channel MOSFET Transistor 2SK1701 DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot vari

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JMTK170N10A Description JMT N-channel Enhancement Mode Power MOSFET Features  100V,59A RDS(ON)<20mΩ @ VGS =10V  Advanced Trench Technology  Exce

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APTGT300SK170G Buck chopper Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 VCES = 1700V IC = 300A @ Tc = 80°C Application • AC

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ATI LOW EMI CLOCK GENERATOR DATASHEET MK1705A Description The MK1705A generates a low EMI output clock from a clock or crystal input. The part is de

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PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTK170P10P IXTX170P10P VDSS = ID25 = ≤RDS(on) -100V -170A 12mΩ TO-264 (IXTK) S

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