K193 Datasheet | Specifications & PDF Download

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2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applicatio

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2SK1936-01 FAP-IIA Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ±

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum L

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lo

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1938 DESCRIPTION ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Vo

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isc N-Channel MOSFET Transistor 2SK1937-01 DESCRIPTION ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Spee

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2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applicatio

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2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakd

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2SK1934 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on–resistance High speed switching No secondary breakd

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2SK1937-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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1:9 Signal Distribution HIGH-PER.ORMANCE PRODUCTS PRELIMINARY SK19XX .amily SK19XX .amily .unctional Block Diagram OUT0 OUT0* OUT1 OUT1* OUT2 OUT2*

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2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakd

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2SK1939-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot

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SHINDENGEN VR Series Power MOSFET N-Channel Enhancement type 2SK1931 ( F5E20 ) 200V 5A FEATURES •œ Applicable to 4V drive. •œ The static Rds(on) is s

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo

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