K216 Datasheet | Specifications & PDF Download

2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Compleme

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2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005 Application High frequency an

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Ordering number:ENN4631 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK2167 Ultrahigh-Sp

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Ordering number:ENN4601A N-Channel Silicon MOSFET 2SK2161 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed swi

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Ordering number:ENN4600A N-Channel Silicon MOSFET 2SK2160 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed swi

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Ordering number:ENN4601A N-Channel Silicon MOSFET 2SK2161 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed swi

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Ordering number:ENN4555 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK2168 Ultrahigh-Sp

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: V

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2SK2166-01R FAP-IIIA Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche

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www.wkmic.com WK2168 SPI/UART/IIC/8 4 256FIFOUART WK2168 1. WK2168256FIFO UART/SPITM/IIC/8 4UART。， 4UART。 UART： UART 、、， 2Mbps 。 IrDA 、RS-48

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CFK2162-P3 QNX@š•@RNP@gh¡ KST@‡b“@p•žˆ˜@g„a™@fet www.DataSheet4U.com mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY tˆ’Z@RXQNYXXNTVPP@

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2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Compleme

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CFK2162-P5 Product Specifications July 1997 (1 of 4) Features t High Gain t +34 dBm Power Output t Proprietary Power FET Process t >45% Linear Power A

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2SK2165-01 FAP-IIIA Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche

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800-900 MHz +34 dBm Power GaAs FET August 2006 - Rev 03-Aug-06 CFK2162-P1 www.DataSheet4U.com Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Te

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CFK2162-P5 RNS@š•@RNU@gh¡ KST@‡b“@p•žˆ˜@g„a™@fet www.DataSheet4U.com mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY tˆ’Z@RXQNYXXNTVPP@

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CFK2162-P3 Product Specifications July 1997 (1 of 4) Features t High Gain t +34 dBm Power Output t Proprietary Power FET Process t >45% Linear Power A

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Ordering number:ENN4556 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK2169 Ultrahigh-Sp

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www.DataSheet4U.com șȒȅȓȋǷഽࢹÅୋܹ࢘‫ܩ‬ྈ໤Å    ÅSDQDVRQLF GHQNRFRMSDF www.DataSheet4U.com Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω ΩΩ ΩΩ ΩΩ ΩΩ ΩΩ ΩΩ ΩΩ

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