K30 Datasheet | Specifications & PDF Download

Silicon Junction FETs XIAOSHENG Symbol: Drain LH03 Series of Products interconvert: www.datasheet4u.com 2SK30A Gate Source Silicon N-Chinnel Jun

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW30N60H3 600V high speed switching se

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3053 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3053 is N-C

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Metal Oxide Varistor ROHS series Part Number Code. Example : V 10 K (1) (2) (3) (1) Varistor (2) Nominal Diameter : 05 : 5mm 07 : 7mm 10 : 10mm 14 : 1

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FNK P-Channel Enhancement Mode Power MOSFET FNK3070PC/D Description The FNK3070PC/D uses advanced trench technology and design to provide excellent

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K3020P(G) Series Vishay Telefunken Optocoupler with Phototriac Output Description The K3020P(G) series consists of a phototransistor optically couple

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GFMK3045 Trench SCHOTTKY Diodes ■ Features ● ， Low VF，low IR ● ， Low Power loss, High efficiency ● （ESD>=30KV） :IEC-61000-4-2， High ESD（ESD>=30

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RK3036 Datasheet Rev 1.2 Rockchip RK3036 Datasheet Revision 1.2 Dec. 2015 Copyright 2015 @Fuzhou Rockchip Electronics Co., Ltd. 1 RK3036 Datashee

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RP506x Series 2 A PWM/VFM Step-down DC/DC Converter with Synchronous Rectifier NO.EA-296-130925 OUTLINE The RP506x are low supply current CMOS-based P

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LNK302/304-306 LinkSwitch™-TN Family Lowest Component Count, Energy-Efficient Off-Line Switcher IC Product Highlights Cost Effective Linear/Cap Dropp

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R SEMICONDUCTOR FEATURES ● Glass passivated chip junction ● High case dielectric strength ● High surge current capability ● ldeal for printed circuit

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R SEMICONDUCTOR FEATURES ● Glass passivated chip junction ● High case dielectric strength ● High surge current capability ● ldeal for printed circuit

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K3020P(G) Series Vishay Telefunken Optocoupler with Phototriac Output Description The K3020P(G) series consists of a phototransistor optically couple

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Metal Oxide Varistor ROHS series Part Number Code. Example : V 10 K (1) (2) (3) (1) Varistor (2) Nominal Diameter : 05 : 5mm 07 : 7mm 10 : 10mm 14 : 1

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IKW30N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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-55~1 25 ~ SKミ : _\-GR ~d.8 ~ ~COMMON ~ REGIO~) ~o\~ ~ ~ t~ v~~: ïov 1~ NF-~ DSS ~~

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FNK30H160 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK30H160 uses advanced trench technology and design to provide excellent RDS(O

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Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • EXTENDED TEMPERATURE +125OC & LONG LIFE (T0 5,000 HOURS) AVAILABLE WITH ANTI-VIBRATION

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2SK3069 Silicon N Channel MOS FET High Speed Power Switching ADE-208-694I (Z) 10th. Edition February 1999 Features • Low on-resistance R DS(on) = 6 m

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2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Inpu

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