K30 Datasheet | Specifications & PDF Download

Silicon Junction FETs XIAOSHENG Symbol: Drain LH03 Series of Products interconvert: www.datasheet4u.com 2SK30A Gate Source Silicon N-Chinnel Jun

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FNK P-Channel Enhancement Mode Power MOSFET FNK3070PC/D Description The FNK3070PC/D uses advanced trench technology and design to provide excellent

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW30N60H3 600V high speed switching se

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LNK302/304-306 LinkSwitch™-TN Family Lowest Component Count, Energy-Efficient Off-Line Switcher IC Product Highlights Cost Effective Linear/Cap Dropp

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IKW30N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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LNK302/304-306 LinkSwitch™-TN Family Lowest Component Count, Energy-Efficient Off-Line Switcher IC Product Highlights Cost Effective Linear/Cap Dropp

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K3020P(G) Series Vishay Telefunken Optocoupler with Phototriac Output Description The K3020P(G) series consists of a phototransistor optically couple

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3053 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3053 is N-C

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LNK302/304-306 LinkSwitch™-TN Family Lowest Component Count, Energy-Efficient Off-Line Switcher IC Product Highlights Cost Effective Linear/Cap Dropp

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R

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2SK3069 Silicon N Channel MOS FET High Speed Power Switching ADE-208-694I (Z) 10th. Edition February 1999 Features • Low on-resistance R DS(on) = 6 m

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LNK302/304-306 LinkSwitch™-TN Family Lowest Component Count, Energy-Efficient Off-Line Switcher IC Product Highlights Cost Effective Linear/Cap Dropp

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NEW PRODUCT Features • Very Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • High Conductance • Lead, Halogen and Antimo

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FNK30H160 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK30H160 uses advanced trench technology and design to provide excellent RDS(O

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3057 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effec

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