K303 Datasheet | Specifications & PDF Download

SMD Type Junction FET N-Channel Junction Silicon FET 2SK303 Features Ideal for potentiometers, analog switches, low frequency amplifiers, constant c

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This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3031 Silicon N-channel power MOSFET ■ Features Unit: mm • Avalanc

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Power F-MOS FETs 2SK3034 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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RK3036 Datasheet Rev 1.2 Rockchip RK3036 Datasheet Revision 1.2 Dec. 2015 Copyright 2015 @Fuzhou Rockchip Electronics Co., Ltd. 1 RK3036 Datashee

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Power F-MOS FETs 2SK3032 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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Power F-MOS FETs 2SK3035 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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Silicon N Channel Junction FETs 2SK303 LH03 series of products interconvertible 2SK303 Applications For charge sensor, meter amplifier circuit, rheos

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Power F-MOS FETs 2SK3033 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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UNISONIC TECHNOLOGIES CO., LTD 2SK303 LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS 3 12 SOT-113S  FEATURES * Ideal For Potentiometers * An

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Power F-MOS FETs 2SK3030 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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Power F-MOS FETs 2SK3036 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistan

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717PM-1K7PM1.-K81º.8º HYBRID HYBRID LEAD WIRE UL 1007 AWG 24 11.8 (300) MIN .61 (15.5) 4-M3 x 0.5 MIN .157 DP .24 (6) .866 +.000 - .002 (22 +.

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SR3020 thru SR3060 SK3020 thru SK3060 MINIATURE SCHOTTKY BARRIER RECTIFIER CHENG- YI ELECTRONIC VOLTAGE RANGE 20 TO 60 Volts CURRENT 30.0 Amperes TO

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Power F-MOS FETs 2SK3037 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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PRODUCT FAMILY DATA SHEET J Series® 3030 LEDs PRODUCT DESCRIPTION J Series® LEDs extend Cree LED’s industry-leading portfolio of lighting‑class LEDs

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FNK3035P FNK P-Channel Enhancement Mode Power MOSFET Description TheFNK3035P uses advanced trench technology and design to provide excellent RDS(ON)

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hybrid 17PM-K 6.1 (15.5) .55 (14) 1.8º LEAD WIRE AWG#24 UL1007 11.8 (300) MIN PIN NO. 1 .0000 .1869+ -.0005 0 ( 5- 0.013 ) .39 (10) .02 (0.5) .31

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