K4A60 Datasheet | Specifications & PDF Download

K4A60D-VB K4A60D-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC)

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TK4A60D-VB TK4A60D-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC

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K4A60-VB K4A60-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qg

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TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DA Switching Regulator Applications • • • • Low drain-source ON re

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TK4A60-VB TK4A60-VB Datasheet N-Channel 650V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC

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TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications • Low drain-source ON-resistan

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TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm

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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK4A60D，ITK4A60D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.4Ω (typ.) ·Enhancement

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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK4A60DA，ITK4A60DA ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.7Ω (typ.) ·Enhanceme

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www.DataSheet4U.com TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60D Switching Regulator Applications • • • • L

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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK4A60DB，ITK4A60DB ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.7Ω (typ.) ·Enhanceme

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TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DA Switching Regulator Applications • • • • Low drain-source ON re

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