KY-012 Datasheet | Specifications & PDF Download

KY-012 Active Piezo-Buzzer module KY-012 Active Piezo-Buzzer module Contents 1 Pictures

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D3, TO-247-2L NDSH10120C-F155 1. Cathode 2. Anode Schottky

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NTST30120CT, NTSJ30120CTG, NTSB30120CT-1G, NTSB30120CTG, NTSB30120CTT4G Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF

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Dual Silicon Carbide Power Schottky Diode CDBGBSC101200-G Reverse Voltage: 1200V Forward Current: 10A RoHS Device Features - Rated to 1200 at 10 Amps

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FSV10120V Ultra-Low VF Schottky Rectifier, 10 A, 120 V Features • Ultra−Low Forward Voltage Drop • Low Thermal Resistance • Very Low Profile: Typica

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MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The propr

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www.DataSheet4U.com Surface Mount Ceramic Capacitor FEATURES • Ultra Stable TCC of 0±30ppm • Excellent Hi-F Performance • Low Dissipation Factor • Id

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www.DataSheet4U.com Surface Mount Ceramic Capacitor FEATURES • Ultra Stable TCC of 0±30ppm • Excellent Hi-F Performance • Low Dissipation Factor • Id

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www.DataSheet4U.com DATA SHEET SKY73012: 400 – 3900 MHz Direct Quadrature Demodulator Applications • WiMAX (802.16) receivers • CDMA macro and pico b

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NTST20120CT, NTSJ20120CTG, NTSB20120CT-1G, NTSB20120CTG, NTSB20120CTT4G Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF

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PFC Device Corporation PTR30120CT PTR30120CTF PTR30120CTI PTR30120CTB 30A 120V HPTR® Schottky Rectifier Major ratings and characteristics Characte

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www.DataSheet4U.com STPS30120DJF Power Schottky rectifier Features ■ ■ ■ ■ ■ ■ ■ A Very small conduction losses Negligible switching losses Extreme

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NTST20120CT, NTSJ20120CTG, NTSB20120CT-1G, NTSB20120CTG, NTSB20120CTT4G Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF

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NTS10120MFS, NRVTS10120MFS Very Low Forward Voltage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for

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NTS10120EMFS, NRVTS10120EMFS Very Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very L

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NTSV20120CT Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.557 V at IF = 5 A Features • Fine Lithography Trench−bas

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V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifie

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Silicon Carbide Schottky Diode 1200 V, 20 A FFSH20120A-F085 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that pro

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-3L NDSH40120CDN Schottky Diode Description Sili

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Green SILICON CARBIDE SCHOTTKY DIODE LSC10120FW REVERSE VOLTAGE – 1200 Volts FORWARD CURRENT – 10 Amperes FEATURES • Positive temperature coefficien

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