KY-033 Datasheet | Specifications & PDF Download

KY-033 Tracking sensor module KY-033 Tracking sensor module Contents 1 Picture

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HiRel Silicon Schottky Diode Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Herme

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SMD Schottky Barrier Diode SMD Diodes Specialist CDBFR0320/0330/0340 (RoHs Device) I O = 350 mA V R = 20 to 40 Volts Features Low forward voltage. De

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HiRel Silicon Schottky Diode Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Herme

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SMD Schottky Barrier Diode SMD Diodes Specialist CDBU0320/0330/0340 (Lead-free Device) I O = 350 mA V R = 20 to 40 Volts Features Low forward voltage

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www.DataSheet4U.com Surface Mount Ceramic Capacitor FEATURES • Ultra Stable TCC of 0±30ppm • Excellent Hi-F Performance • Low Dissipation Factor • Id

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MIS Chip Capacitors SC Series Features ■ Readily Available From Stock ■ High Reliability Silicon Oxide–Nitride Dielectric ■ Low Loss — Typically 0.04

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1N8033-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum operating temperature  Zero rev

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SMD Schottky Barrier Diode SMD Diodes Specialist CDBF0320/0330/0340 (RoHS Device) I O = 350 mA V R = 20 to 40 Volts Features Low forward voltage. Des

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SMD Schottky Barrier Diode SMD Diodes Specialist CDBUR0320/0330/0340 (RoHs Device) I O = 350 mA V R = 20 to 40 Volts Features Low forward voltage. De

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SMD Schottky Barrier Diode CDBFR0320/0330/0340-HF Io = 350 mA VR = 20 to 40 Volts RoHS Device Halogen Free 1005/SOD-323F Features -Low forward v

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Two Terminals Schottky Barrier Diode Features • For high speed switching • Low reverse current • Low forward voltage • RoHS compliant Mechanical Data

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() CRSM033N08N4 SkyMOS4 N-MOSFET 80V, 3.1mΩ, 80A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Excelle

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www.DataSheet4U.com PRELIMINARY DATA SHEET SKY73033: 1700 – 2200 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Appli

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() CRST033N08N,CRSS031N08N SkyMOS1 N-MOSFET 85V, 2.5mΩ, 160A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(o

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() CRST036N12N3Z,CRSS033N12N3Z SkyMOS3 N-MOSFET 120V, 2.8mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance

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ASB0320/30/40 SMD Schottky Barrier Diode Features IO = 350mA VR = 20V to 40V - Low forward voltage - Designed for mounting on small surface. - Extreme

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DATA SHEET SKY73033-11: 1700 – 2200 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications Applications x 2G/3G

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