1N8033-GA High Temperature Silicon Carbide Power Schottky Diode

GeneSiC

Description

1N8033-GA High Temperature Silicon Carbide Power Schottky Diode .

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Datasheet Specifications

Part number: 1N8033-GA
Manufacturer: GeneSiC
File Size: 706.12 KB
Datasheet: 1N8033-GA-GeneSiC.pdf
Description: High Temperature Silicon Carbide Power Schottky Diode

Features

* 650 V Schottky rectifier
* 250 °C maximum operating temperature
* Zero reverse recovery charge
* Superior surge current capability
* Positive temperature coefficient of VF
* Temperature independent switching behavior
* Lowest figure of merit QC/IF
* Available screen

Applications

* Down Hole Oil Drilling
* Geothermal Instrumentation
* Solenoid Actuators
* General Purpose High-Temperature Switching
* Amplifiers
* Solar Inverters
* Switched-Mode Power Supply (SMPS)
* Power Factor Correction (PFC) Maximum Ratings at Tj = 250 °C, unless otherwise

1N8033-GA Distributors

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1N8033-GA High Temperature Silicon Carbide Power Schottky Diode GeneSiC

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