1N8033-GA

High Temperature Silicon Carbide Power Schottky Diode

GeneSiC

* 650 V Schottky rectifier

* 250 °C maximum operating temperature

* Zero reverse recovery charge

* Superior surge current capability

* Positive temperature coefficient of VF

* Temperature independent switching behavior

* Lowest figure of merit QC/IF

* Available screen

1N8033-GA

GeneSiC

706.12 KB

High temperature silicon carbide power schottky diode.

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