Datasheet4U Logo Datasheet4U.com

1N8024-GA - High Temperature Silicon Carbide Power Schottky Diode

1N8024-GA Description

1N8024-GA High Temperature Silicon Carbide Power Schottky Diode .

1N8024-GA Features

* 1200 V Schottky rectifier
* 250°C maximum operating temperature
* Electrically isolated base-plate
* Zero reverse recovery charge
* Superior surge current capability
* Positive temperature coefficient of VF
* Temperature independent switching behavior
* Lowest figur

1N8024-GA Applications

* Down Hole Oil Drilling
* Geothermal Instrumentation
* Solenoid Actuators
* General Purpose High-Temperature Switching
* Amplifiers
* Solar Inverters
* Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Maximum Ratings at Tj = 250 °C, unless otherwise speci

📥 Download Datasheet

Preview of 1N8024-GA PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
1N8024-GA
Manufacturer
GeneSiC
File Size
765.75 KB
Datasheet
1N8024-GA-GeneSiC.pdf
Description
High Temperature Silicon Carbide Power Schottky Diode

📁 Related Datasheet

  • 1N8020 - HYPER FAST SOFT RECOVERY RECTIFIER (SSDI)
  • 1N8021 - HYPER FAST RECOVERY RECTIFIER (SSDI)
  • 1N8022 - HYPER FAST RECOVERY RECTIFIER (SSDI)
  • 1N8023 - HYPER FAST RECOVERY RECTIFIER (SSDI)
  • 1N80 - N-CHANNEL POWER MOSFET (UTC)
  • 1N8018 - HYPER FAST SOFT RECOVERY RECTIFIER (SSDI)
  • 1N8019 - HYPER FAST SOFT RECOVERY RECTIFIER (SSDI)
  • 1N81 - Gold Bonded Diode (BKC)

📌 All Tags

High Temperature Silicon Carbide Power Schottky Diode GeneSiC
GeneSiC 1N8024-GA-like datasheet