1N8024-GA Datasheet - GeneSiC

1N8024-GA - High Temperature Silicon Carbide Power Schottky Diode

1N8024-GA Features

* 1200 V Schottky rectifier

* 250°C maximum operating temperature

* Electrically isolated base-plate

* Zero reverse recovery charge

* Superior surge current capability

* Positive temperature coefficient of VF

* Temperature independent switching behavior

* Lowest figur

Datasheet Details

1N8024-GA

GeneSiC

765.75 KB

High temperature silicon carbide power schottky diode.

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