Lateral Datasheet | Specifications & PDF Download

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K0900G - K2600G Axial Leaded Silicon Bilateral Voltage Triggered Features · Excellent capability of absorbing transient surge · Quick response to sur

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EC-10N16/20 & EC-10P16/20 HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS N & P CHANNEL LATERAL MOSFETs T03 8.2 1.57 + 0.5 11.5 + 0.3 2

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1N5758,A thru 1N5762,A (SILICON) SILICON 3-LAYER BILATERAL TRIGGERS Annular, two terminal devices that exhibit bi-directional negative resistance

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EC-10N16/20 & EC-10P16/20 HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS N & P CHANNEL LATERAL MOSFETs T03 8.2 1.57 + 0.5 11.5 + 0.3 2

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MITSUBISHI CMOS LOGIC M4066BP QUADRUPLE BILATERAL SWITCH DESCRIPTION The M4066BP is a semiconductor integrated circuit consisting of four independen

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MOC3040, MOC3041, MOC3042, MOC3043 MOC3040X, MOC3041X, MOC3042X, MOC3043X OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TR

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EC-10N16/20 & EC-10P16/20 HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS N & P CHANNEL LATERAL MOSFETs T03 8.2 1.57 + 0.5 11.5 + 0.3 2

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2N4991 Integrated Circuit Silicon Bilateral Switch (SBS) TO−92/TO−98 Type Package Description: The 2N4991 is a silicon planer, monolithic integrated

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CD4066B SCHS051I – NOVEMBER 1998 – REVISED MAY 2024 CD4066B CMOS Quad Bilateral Switch 1 Features • 15V digital or ±7.5V peak-to-peak switching • 125

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Ordering number : EN1536B CMOS LSI LC4966 Quad Bilateral Switch Overview The LC4966 is an IC that provides the same functions as the MLC4066B and t

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Linear Integrated Systems SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Product Summary Part Number SD210DE SD214DE SST210 SST214 V(BR)DS Min(V) 30

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ECX10N20 N CHANNEL LATERAL MOSFET N Channel Lateral Mosfet Designed speci cally for linear audio ampli er applications High-speed for high bandwidth

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CMOS Digital Integrated Circuits Silicon Monolithic 74HC4066D 74HC4066D 1. Functional Description • Quad Bilateral Switch 2. General The 74HC4066D i

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2N4992 Silicon bilateral switch (SBS) in package TO-92 0.7max 0.45max 5.2 1 2.5 2 1.6 4.2 5.2 14.5 3 Pinouts: 1- Anode II, 2- Gate, 3- Anod

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EC-10N16/20 & EC-10P16/20 HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS N & P CHANNEL LATERAL MOSFETs T03 8.2 1.57 + 0.5 11.5 + 0.3 2

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ECF10N20 HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS N & P CHANNEL LATERAL MOSFETs T03 8.70 1.50 11.60 +0.3 25.00 10.90 + 0.1 3 3

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