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GENERAL DESCRIPTION OB2268/9 is a highly integrated current mode PWM control IC optimized for high performance, low standby power and cost effective o

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GENERAL DESCRIPTION OB2268/9 is a highly integrated current mode PWM control IC optimized for high performance, low standby power and cost effective o

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GENERAL DESCRIPTION OB2268/9 is a highly integrated current mode PWM control IC optimized for high performance, low standby power and cost effective o

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LITE-ON SEMICONDUCTOR W005G thru W10G GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes FEATURES

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LITE-ON SEMICONDUCTOR W005G thru W10G GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes FEATURES

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LITE-ON SEMICONDUCTOR W005G thru W10G GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes FEATURES

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LSP5523 3A 27V Synchronous Buck Converter General Description The LSP5523 is a monolithic synchronous buck regulator. The device integrates 90 mΩ MOSF

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A733 PNP Epitaxial Silicon Transistor LOW FREQUENCY AMPLIFIER Collector-Emitter Voltage: VCEO=-50V Collector Dissipation: PC(max)=250mW Absolute Max

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ESMT Features z Single supply voltage 8 ~ 26V for loudspeaker driver Built-in LDO output 3.3V for others z Loudspeaker power from 24V supply BTL Mode:

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GENERAL DESCRIPTION OB2268/9 is a highly integrated current mode PWM control IC optimized for high performance, low standby power and cost effective o

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ILI2301S ILI2301S Capacitive Touch Sensor Controller Specification Version: V1.00 Date: 2014/12/25 ILI TECHNOLOGY CORP. 8F, No.38, Taiyuan St., Jhubei

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SURFACE MOUNT FAST SWITCHING DIODE FEATURES • Fast switching device (Trr < 4.0 ns) • SOD-323F package • Surface device type mounting • General Purpose

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SHEN ZHEN ELITE CHIP MICROCIRCUIT CO.,LTD EC190708- 09F6-19E7 3 ． ：DC 2.4-5.0V K1， OUT ，，。 3 ，。 3 ，OUT 。 . （VDD=5.0V TA=25℃）

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AT6558R-5300 BDS/GNSS SOC AT6558R-5300 BDS/GNSS SOC AT6558R-5300 BDS/GNSS SOC DS-AT6558-R-5300 1.0 ，。 www.icofchina.com 1 /

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C3198 NPN Epitaxial Silicon Transistor Features Collector-Emitter Voltage: VCEO=50V Collector Dissipation: PC(max)=625mW TO-92 Absolute Maximum Rat

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LITE-ON SEMICONDUCTOR GBJ8005 thru GBJ810 GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 8.0 Amperes FEAT

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LITE-ON SEMICONDUCTOR SURFACE MOUNT SUPER FAST RECTIFIERS FS1A thru FS1J REVERSE VOLTAGE - 50 to 600 Volts FORWARD CURRENT - 1.0 Ampere FEATURES Gla

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LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors FEATURES Glass-Passivated Surface for Reliability and

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$ % DRAM FEATURES X4 organization EDO (Extended Data-Out) access mode Single power supply : 5V ± 10% Vcc for 5V product 3.3V ± 10% Vcc for 3.3V produ

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www.datasheet4u.com www.datasheet4u.com

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