M120 Datasheet | Specifications & PDF Download

S78DMxxx Low Dropout Voltage Regulator (0.5A Series) Semiconductor http:// www.auk.co.kr SOT-223 TO-252-3L Description The S78DMxxx is an efficient

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DIM1200NSM17-E000 www.DataSheet4U.com DIM1200NSM17-E000 Single Switch IGBT Module Replaces June 2004 version, issue PDS5644-2.0 PDS5644-3.0 July 2004

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www.DataSheet4U.com ЭЛЕКТРОМАГНИТНЫЕ ИЗЛУЧАТЕЛИ ЗВУКА Преобразуют электрический сигнал в звуковой. Излучатели могут подключаться к внешнему источнику

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Low Noise Amplifier 1.5 - 1.6 GHz Features q q q q q q q MAAM12021 SO-8 PIN 8 Orientation mark PIN 1 .1890-.1968 (4.80-5.00) -A.004 (0.10) .0532-.0688

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www

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SM120AF thru SM1100AF Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 1.0A FEATURES * Plastic package has Underwriters Laborato

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DFM1200XXM45-TS000 Fast Recovery Diode Module DS6130-1 October 2013 (LN31069) FEATURES  Low Reverse Recovery Charge  High Switching Speed  Low For

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Replaces DS6129-1 DFM1200XXM45-TS001 Fast Recovery Diode Module DS6129-2 April 2014 (LN31496) FEATURES  10.2kV Isolation Package  Low Reverse Reco

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STG35M120F3D7 Datasheet 1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing C G Features • 10 μs of short-circuit withst

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www.vishay.com V20DM120C Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.55 V at IF = 5 A eSMP® Se

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11.5 ±0.2 14 ±0.2 Replaces DS6282-4 TRENCH Gen5 TMOS Preliminary Information DIM1200DDM17-PT500 Dual Switch IGBT Module DS6282-5 May 2021 (LN40943)

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DIM1200FSS12-A000 Single Switch IGBT Module DS5834-1.2 August 2008 (LN26321) FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated

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Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanch

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LM1203B 100 MHz RGB Video Amplifier System January 1996 LM1203B 100 MHz RGB Video Amplifier System General Description The LM1203B is an improved v

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www.vishay.com SQM120N04-1m9 Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A

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Philips Optical Storage DATA SHEET VAM1202/12 CD mechanism for 2x Speed Product specification Version 1.1 Philips Components September 2000 Philips

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SM1200NSAS ® N-Channel Enhancement Mode MOSFET Features Pin Description · 60V/0.2A , RDS(ON)=2.2W(max.) @ VGS=10V RDS(ON)=2.6W(max.) @ VGS=4.5V ·

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Preliminary Information Data DIM1200ASM45-TL000 Single Switch IGBT Module D6158S-1 September 2014 (LN31981) FEATURES  10µs Short Circuit Withstand 

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DIM1200FSM17-A000 DIM1200FSM17-A000 Single Switch IGBT Module Replaces May 2001, version DS5456-1.1 DS5456-2.0 March 2002 FEATURES s s s s 10µs Sho

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APTM120SK15 Buck chopper MOSFET Power Module VBUS Q1 VDSS = 1200V RDSon = 150mΩ max @ Tj = 25°C ID = 60A @ Tc = 25°C Application • • AC and DC motor

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