M5S Datasheet | Specifications & PDF Download

IPA060N06NM5S MOSFET OptiMOSTM 5 Power-Transistor, 60 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on

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www.DataSheet4U.com Super Fast Recovery Diode RFU20TM5S Series Ultra Fast Recovery Dimensions(Unit : mm) Structure Applications General rectific

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Public IQD016N08NM5SC Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 80 V Features • N‑channel, normal level • Very low on‑resistance RDS(on) •

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Public IQDH88N06LM5SC Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 60 V Features • N‑channel, logic level • Very low on‑resistance RDS(on) •

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DMTH45M5SPDWQ Green 40V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 40V RDS(ON) 5.5mΩ @ VGS = 10V ID TC = +2

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DMTH45M5SPSW Green 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 40V RDS(ON) Max 5.5mΩ @ VGS = 10V ID Max TC =

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IQE046N08LM5SC MOSFET OptiMOSTM 5 Power-Transistor, 80 V Features • Optimized for high performance SMPS, e.g. synchronous rectification • N-channel,

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IQE220N15NM5SC MOSFET OptiMOSTM 5 Power-Transistor, 150 V Features • N-channel, normal level • Superior thermal resistance • 100% avalanche tested •

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Public IQDH35N03LM5SC Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 30 V Features • N‑channel, logic level • Very low on‑resistance RDS(on) •

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FBI1.5B5S2 FBI1.5M5S2 1.5 Amp. Glass Passivated Bridge Rectifier Dimensions in mm. 20 Plastic Case 3.5 Voltage 100 to 1000 V. Current 1.5 A.

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DMTH10H2M5STLW Green 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI1012-8 (TOLL) Product Summary BVDSS 100V RDS(ON) Max 2.5mΩ @ VGS = 10V ID

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DMTH45M5SPSWQ Green 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 40V RDS(ON) Max 5.5mΩ @ VGS = 10V ID Max TC =

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DMTH61M5SPSW Green 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) MAX 1.5mΩ @ VGS = 10V ID MAX TC = +25°C 225A De

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Public IQD009N06NM5SC Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 60 V Features • N‑channel, normal level • Very low on‑resistance RDS(on) •

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ULBM5SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5SL is Designed for PACKAGE STYLE .280 4L STUD FEATURES: • • • Omnigold™ Metalizati

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DMTH45M5SFVWQ 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 40V RDS(ON) Max 5.5mΩ @ VGS = 10V ID Max TC = +25°C

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DMTH61M5SPSWQ Green 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features BVDSS 60V RDS(ON) MAX 1.5mΩ @ VGS = 10V I

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ADVANCED INFORMATION Green DMT61M5SPSW 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 60V RDS(ON) MAX 1.5mΩ @ VGS = 1

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DMTH10H2M5STLWQ Green 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI1012-8 (TOLL) Product Summary BVDSS 100V RDS(ON) Max 2.5mΩ @ VGS = 10V I

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DMTH45M5SFVW Green 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 40V RDS(ON) Max 5.5mΩ @ VGS = 10V ID Max TC =

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