M660 Datasheet | Specifications & PDF Download

P-Channel 60-V (D-S) MOSFET DTM6601 www.din-tek.jp PRODUCT SUMMARY VDS (V) - 60 RDS(on) () 0.024 at VGS = - 10 V 0.031 at VGS = - 4.5 V ID (A)a

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SGM6607A 1.2A High Voltage Boost Converter in Small Packages GENERAL DESCRIPTION The SGM6607A is a high voltage switching regulator. It integrates a

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P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense ce

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EM MICROELECTRONIC - MARIN SA EM6603 Ultra Low Power Multi I/O Microcontroller Features • Low Power - typical 1.8µA active mode - typical 0.35µA stan

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CMOS Switched-Capacitor Voltage Converters ADM660/ADM8660 FEATURES ADM660: Inverts or Doubles Input Supply Voltage ADM8660: Inverts Input Supply Volt

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EM MICROELECTRONIC - MARIN SA EM6604 Ultra Low Power Multi I/O Microcontroller Features • Low Power - typical 1.7µA active mode - typical 0.3µA stand

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R EM MICROELECTRONIC - MARIN SA EM6607 Ultra-low power microcontroller with 4 high drive outputs Features ‰ Low Power typical 1.8µA active mode typi

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CEM6600 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4A, RDS(ON) = 76mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. Super high dense

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Chip Schottky Barrier Diodes FM620-T THRU FM6100-T Silicon epitaxial planer type Formosa MS SMC-T 0.276(7.0) 0.260(6.6) 0.012(0.3) Typ. Features Pl

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Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -3.8A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high den

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(0 0,&52(/(&7521,& 0$5,1 6$ EM6605 - 4 bit Microcontroller Features • Low Power - typical 4.0µA active mode - typical 2.5µA standby mode - typical 0.

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ADVANCE INFORMATION IBIS4-A-6600 CYII4SM6600AB 6.6 MP CMOS Image Sensor Table 1. Key Performance Parameters (continued) Parameter Operating temperat

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ADVANCE INFORMATION IBIS4-A-6600 CYII4SM6600AB 6.6 MP CMOS Image Sensor Table 1. Key Performance Parameters (continued) Parameter Operating temperat

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GM66015 1.5A LOW DROPOUT PRECISION REGULATOR Description GM66015 series of positive adjustable and fixed regulators is designed to provide 1.5A outpu

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SGM66057 2.2MHz, Fixed Output Synchronous Tiny Boost Converter with a 3.4A Switch GENERAL DESCRIPTION The SGM66057 is an internally compensated, 2.2M

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FEDL6606-03 ¡ Semiconductor FEDL6606-03 This version: Sep. 2000 MSM6606 Previous version: Nov. 1997 June 1992 ¡ Semiconductor MSM6606 80-DOT LCD DRI

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CEM6608 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4A, RDS(ON) = 76mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. Super high

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