MA-Com Datasheet | Specifications & PDF Download

www.DataSheet4U.com Order this document by LM311/D Highly Flexible Voltage Comparators The ability to operate from a single power supply of 5.0 V to

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.‘ i PREPARED BY : DATE SPEC No. L C 9 9 2 0 4 SHARP FILE No. I SSUED FEB. 5.1999 PAGE 24 Pages APPLICABLE DIVISION SPECIFICATION N DUTY LCD

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XT2052 1A Compatible With the USB Interface, Linear Battery Management Chip ■ General Description The XT2052 is a constant- current / constant- volt

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T-1000 Two-Way Power Divider, 10 - 1000 MHz Features C-7  Broadband Frequency Range  Isolation - 25 dB Min  Insertion Loss - 0.8 dB Max Rev. V

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1N5711 General Purpose Axial Lead Glass Packaged Schottky Diodes Features  Low Leakage Current  Pico Second Switching Speed  Glass Hermetically S

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H-183-4 Microwave Hybrid Junction, 30 MHz - 3 GHz Features  0o - 180o Hybrid  Seven Octave Frequency Range C-11 Rev. V2 Guaranteed Specifications

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MRF151G RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features Guaranteed Performance at 175 MHz, 50 V:  Output

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QL4016 QuickRAM Data Sheet • • • • • • 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM Device Highlights High Per

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NTE100 (PNP) & NTE101 (NPN) Germanium Complementary Transistors Oscillator, Mixer for AM Radio, Medium Speed Switch Absolute Maximum Ratings: (TA = +2

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203X Series 3 dB Hybrid Couplers Rev. V4 Features  90o Quadrature Phase  Frequency Range: 0.05 - 18 GHz  Temperature Range: -65o to 125oC  Meet

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DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS 1N60P TECHNICAL SPECIFICATIONS OF SMALL SINGAL SCHOTTKY DIODES FEATURES * Metal silicon junction,

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KSV14xx Series Silicon Hyperabrupt Tuning Varactors: High Q Values Features  Low Inductance  Wide Capacitance Swing  High Q  Superior Reproducibil

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V9x Series Silicon Abrupt Tuning Varactors: General Purpose - Ultra Low Leakage Features  Ultra-Low Leakage  Available as Bare Die or in Glass Axial

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NEe Microcomputers, Inc. NEe p.PD8049 p.PD8039L HIGH PERFORMANCE SINGLE CHIP8-BIT MICROCOMPUTERS DESCRIPTION The NEC /.IPDS049 and /.IPDS039L are

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MSV SEMI Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed

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NTE102 (PNP) & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium com

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QL4016 QuickRAM Data Sheet • • • • • • 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM Device Highlights High Per

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QL4016 QuickRAM Data Sheet • • • • • • 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM Device Highlights High Per

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