MJD45H11 Datasheet | Specifications & PDF Download

Complementary Power Transistors DPAK for Surface Mount Applications MJD44H11 (NPN), MJD45H11 (PNP) Designed for general purpose power and switching s

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isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Comple

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H11/D Complementary Power Transistors • • • • • • • MJD44H11 * PNP MJD45H11 * *M

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MJD45H11A 80 V, 8 A PNP high power bipolar transistor 28 May 2019 Product data sheet 1. General description PNP high power bipolar transistor in a p

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MJD44H11T4, MJD45H11T4 Datasheet Low voltage complementary power transistors Features TAB 23 1 DPAK C (2, TAB) C (2, TAB) • Low collector-emitter

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www.DataSheet4U.com MJD44H11T4-A MJD45H11T4-A Complementary power transistors Features ■ ■ ■ ■ . The devices are qualified for automotive applicat

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Complementary Power Transistors DPAK for Surface Mount Applications MJD44H11 (NPN), MJD45H11 (PNP) Designed for general purpose power and switching s

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MJD45H11 — PNP Epitaxial Silicon Transistor April 2015 MJD45H11 PNP Epitaxial Silicon Transistor Features • General-Purpose Power and Switching such

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MJD44H11, MJD45H11 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-2

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MJD44H11 (NPN), MJD45H11 (PNP) Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose power and switching

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SMD Type Transistors Complementary Power Transistors MJD45H11 Features Lead Formed for Surface Mount Applications in Plastic Sleeves Fast Switching

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MJD45H11 80 V, 8 A PNP high power bipolar transistor 28 May 2019 Preliminary data sheet 1. General description PNP high power bipolar transistor i

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