MMBD352W Datasheet | Specifications & PDF Download

MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use

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MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use

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www.DataSheet4U.com MMBD352WT1 Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for

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MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 200 mW FEATURES • Low Capacitance,Minimiz

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® WON-TOP ELECTRONICS MMBD352W SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Very Low Capacitance  Low Forward Voltage  PN Junction Guard Rin

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Production specification Schottky Barrier Diode FEATURES  Very low capacitance-less than 1.0Pf @zero volts. Pb Lead-free  Low forward voltage-0.

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MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352WT1/D Dual Schottky Barrier Diode These devices are design

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