MMBT5550 Datasheet | Specifications & PDF Download

Zowie Technology Corporation High Voltage Transistors Lead free product Halogen-free type FEATURE ƽ We declare that the material of product complian

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MMBT5550 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) HIGH VOLTAGE TRANSISTOR NPN SILICON Refer to 2N5550 for graphs. MAXIMUM RATINGS Rating Collecto

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DATA SHEET www.onsemi.com High Voltage Transistors NPN Silicon MMBT5550L, MMBT5551L Features  S and NSV Prefix for Automotive and Other Application

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High Voltage Transistors NPN Silicon 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO

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SMD High Voltage Transistor (NPN) MMBT5550/MMBT5551 SMD High Voltage Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switchin

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5550LT1/D High Voltage Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT5550LT1 MM

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ભၼሽ՗‫ૻڶ‬ֆ‫׹‬ Mayloon Electronic Co., Ltd., www.mayloon.com.hk SINLOON® ᠨᄕীདྷ᧯ጥ MMBT5550 SOT-23 NPN General Purpose Amplifier ϭ FEATURE: Ϭ Power Dis

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NPN General Purpose Amplifier FEATURES  Epitaxial planar die construction.  Ultra-small surface mount package. Pb Lead-free Production specificat

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MMBT5550 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 0.225 W(Tamb=25OC) * Collector current ICM: 0.6 A * Collector-

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SMD Type Transistors Features NPN Silicon High Voltage Transistors MMBT5550 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 +0.12.4 -0.1 12 0.95+0.1 -0.1 1.9

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MMBT5550 / MMBT5551 MMBT5550 / MMBT5551 NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Obe

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MMBT5550 NPN General Purpose Amplifier MMBT5550 NPN General Purpose Amplifier • This device is designed for general purpose high voltage amplifiers a

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High Voltage NPN Transistors MMBT5550 MMBT5551 COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT-23 V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 =

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