MOS-Transistors Datasheet | Specifications & PDF Download

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (

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TDA4605 CONTROL CIRCUIT FOR SWITCH MODE POWER SUPPLIES USING MOS TRANSISTORS . . . . . . . . . FOLD-BACK CHARACTERISTIC PROVIDES OVERLOAD PROTECTION

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2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for h

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CS830 CS830 VDMOS 1. CS830 VDMOS ，。 ： ● ● ● ● ：TO-220AB 10.7max 4.8max 1.4max φ3.84 6.9max 2. 2.1 ，Tamb= 25℃ ID VGS IAR （） RθJC

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Freescale Semiconductor Technical Data Document Number: MMRF1312H Rev. 0, 3/2016 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPF6659/D TMOS FET Transistors N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE MAXI

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BUZ50A–220M BUZ50B–220M MECHANICAL DATA Dimensions in mm 10.6 (0.42) 0.8 4.6 (0.18) (0.03) 3.70 Dia. Nom 16.5 (0.65) 1.5(0.53) 10.6 (0.42) 123

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BS250 DMOS Transistors (P-Channel) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ ♦ ♦ ♦ ♦ ♦ High input impedance High-speed switc

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Freescale Semiconductor Technical Data Document Number: MMRF1312H Rev. 0, 3/2016 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--

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NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These devices are designed

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MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI s s s s s V DSS 600 V 600 V R DS( on) < 2.5 Ω < 2.5 Ω ID

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Freescale Semiconductor Technical Data Document Number: AFV121KH Rev. 0, 11/2015 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--

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NXP Semiconductors Technical Data Document Number: AFT20S015N Rev. 2, 04/2020 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFET

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