MOS-Transistors Datasheet | Specifications & PDF Download

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (

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SMD Type TransistIoCrs MOS Field Effect Transistors 2SK2484 Features Low On-state Resistance:RDS(on)=2.8 max.(VGS=10V,ID=3.0A) Low Ciss Ciss=1200pF

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MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance produ

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CS830 CS830 VDMOS 1. CS830 VDMOS ，。 ： ● ● ● ● ：TO-220AB 10.7max 4.8max 1.4max φ3.84 6.9max 2. 2.1 ，Tamb= 25℃ ID VGS IAR （） RθJC

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BS250 DMOS Transistors (P-Channel) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ ♦ ♦ ♦ ♦ ♦ High input impedance High-speed switc

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TDA4605 CONTROL CIRCUIT FOR SWITCH MODE POWER SUPPLIES USING MOS TRANSISTORS . . . . . . . . . FOLD-BACK CHARACTERISTIC PROVIDES OVERLOAD PROTECTION

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~Siliconix .,1;11 incorporated VN0610L, VN10KE, VN10KM N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER

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NTE7154 Integrated Circuit Control Circuit for Switch Mode Power Supplies using MOS Transistors Description: The NTE7154 is an integrated circuit in a

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Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25N Rev. 2, 4/2015 RF Power LDMOS Transistors High Ruggedness N--Channel Enhanceme

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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NXP Semiconductors Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed fo

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