ESMT
M12L64164A-5TG2Y - 1M x 16 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key
(38 views)
ESMT
M12L64322A-5TG2S - 512K x 32 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program
(34 views)
ESMT
M12L128168A-6TVAG2N - Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key
(32 views)
ESMT
M12L128168A-6BVG2N - Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key
(32 views)
ESMT
M12L64164A-6BG2C - 1M x 16 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program
(31 views)
ESMT
M12L16161A-5TG2R - 512K x 16Bit x 2Banks Synchronous DRAM
ESMT
SDRAM
M12L16161A (2R)
512K x 16Bit x 2Banks Synchronous DRAM
FEATURES
GENERAL DESCRIPTION
JEDEC standard 3.3V power supply
The M12L16161A
(31 views)
ESMT
M12L128168A-5BVG2S - 2M x 16 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key
(31 views)
ESMT
M12L128168A-5TVAG2N - Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key
(31 views)
MAGNETIC
MTB201209G222 - Multilayer Ferrite Chip Beads
LED Displays Numeric 7-segment
Single Digit Display 0.3”
PART NO CHIP material
LSD3211-XX LSD3212-XX LSD3214-XX LSD3215-XX LSD3213-XX LSD3221-XX LSD32
(30 views)
ESMT
M12L64322A-7TG2S - 512K x 32 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program
(30 views)
ESMT
M12L128168A-5TG2S - 2M x 16 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program
(30 views)
ESMT
M12L2561616A-5BG2S - Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key
(30 views)
Micron
MT36HVZS1G2PZ - DDR2 SDRAM VLP RDIMM
8GB (x72, ECC, DR) 240-Pin DDR2 VLP RDIMM Features
DDR2 SDRAM VLP RDIMM
MT36HVZS1G2PZ – 8GB
Features
• 240-pin, registered very low-profile, dual in
(29 views)
ESMT
M12L64164A-7BG2C - 1M x 16 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program
(29 views)
MACOM
CG2H40010 - RF Power GaN HEMT
CG2H40010
10 W, DC - 8 GHz, RF Power GaN HEMT
Description
The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT
(29 views)
ESMT
M12L128168A-5TVG2N - Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key
(29 views)
MAGNETIC
MTB201209G272 - Multilayer Ferrite Chip Beads
LED Displays Numeric 7-segment
Single Digit Display 0.3”
PART NO CHIP material
LSD3211-XX LSD3212-XX LSD3214-XX LSD3215-XX LSD3213-XX LSD3221-XX LSD32
(28 views)
ESMT
M12L128168A-6BG2N - 2M x 16 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key
(28 views)
ESMT
M12L128168A-6TG2S - 2M x 16 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program
(28 views)
MACOM
CG2H30070F - RF Power GaN HEMT
CG2H30070F
70 W, DC - 4.0 GHz, 28 V, RF Power GaN HEMT
Description
The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobilit
(28 views)