NCE Power Datasheet | Specifications & PDF Download

MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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SHENZHEN DONGKE SEMICONDUCTOR CO., LTD -DK112 HIGH PERFORMANCE SWITCH MODE POWER CONTROLLER SPECIFICATION 1. DESCRIPTION The DK112 is specially design

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RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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PRELIMINARY VERSION nly R820T O High Performance Low Power Advanced Digital TV Silicon Tuner Datasheet orSuite 808, Building 53, No.195, Sec.4, Chung

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ME8115 PWM ， AC/DC PWM，AC/DC ， 85-265V 12W(ME8115B18W)， 18W。 ，。 ， AC/DC，IC ， （IcIb）， ，，IC， ，VCC10V， ， ，IC ，，、、 ，。IC ，。 Rs。 ●

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http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technolog

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SHENZHEN DONGKE SEMICONDUCTOR CO., LTD -DK106 HIGH PERFORMANCE SWITCH MODE POWER CONTROLLER SPECIFICATION 1. DESCRIPTION The DK106 is specially design

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OB2338 High Performance Current Mode PWM Power Switch GENERAL DESCRIPTION OB2338 combines a dedicated current mode PWM controller with a high volta

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MD1800/01 Datasheet High performance primary side regulator (PSR) offline switch power supply (SMPS) controller PRODUCT DESCRIPTION MD180X is high pe

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KP3114 High Performance Low Cost Off-line PWM Power Switch FEATURES  Integrated with 700V Power MOSFET and HV Startup Circuit  Integrated rectifie

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http://www.ncepower.com Pb Free Product NCE82H140 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140 uses advanced trench technol

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RU6888R N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab

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Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Test

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OB2571x High Performance QR mode Primary-Side Power Switch GENERAL DESCRIPTION OB2571x is an excellent primary side regulation controller with CC/CV

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FEATURES s 10µA to 20mA Operating Range s Guaranteed 1% Initial Voltage Tolerance s Guaranteed 1Ω Dynamic Impedance s Very Low Power Consumption U APP

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KP321X High Performance Low Cost Off-line PWM Power Switch FEATURES  Integrated with 650V Power MOSFET and HV Startup Circuit  Multi-Mode Control w

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NCEP023N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized

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UNISONIC TECHNOLOGIES CO., LTD UC3854 Advance ENHANCED HIGH POWER FACTOR PREREGULATOR  DESCRIPTION The UTC UC3854 provide all the functions neces

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http://www.ncepower.com Pb Free Product NCEP1520K NCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology tha

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : IC200409 Issued Date : 2004.05.01 Revised Date : 2009.08.20 Page No. : 1/6 HLM358P / HLM358S Low Pow

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