NCT Datasheet | Specifications & PDF Download

(259 views)

R Austria Mikro Systeme International OA211 CUB 0.6 µm CMOS OA211 is an OR / AND circuit providing the logical function Q = [ (A+B).C.D ]. Truth T

(252 views)

Microwave Hybrid Junction 30 MHz - 3 GHz Features q q H-183-4 V2.00 C-11 0°–180° Hybrid Seven Octave Frequency Range Guaranteed Specifications* Di

(240 views)

(233 views)

(232 views)

&' ( ) * + +, $ . /0 1 -# ) 2 #$ 3 % ,&4 0 , % ,&4 0 , ,.%/ 56 / 78* ( % www.DataSheet4U.com # . $% < & $# 7= % ,&4 % ,&

(231 views)

DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

(229 views)

DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

(227 views)

(225 views)

H-183-4 Microwave Hybrid Junction, 30 MHz - 3 GHz Features  0o - 180o Hybrid  Seven Octave Frequency Range C-11 Rev. V2 Guaranteed Specifications

(225 views)

UHF Hybrid Junction 5 MHz - 1 GHz Features q q q H-1-4 V2.00 C-33 Broad Frequency Range 0° - 180° Hybrid with High Isolation MIL-STD-202 Screening

(224 views)

(223 views)

U05GU4B48 SILICON DIFFUSED JUNCTION TYPE RECTIFIER STACK Reverse Voltage - 400 Volts Forward Current - 0.5 Ampere Application: TELCOMMUNICATION APPLIC

(220 views)

Allen-Bradley DIN Rail Timing Relays 700-FS High Performance Timing Relays for DIN Rail Mounting Type Designation Allen-Bradley Solid State Relays fo

(219 views)

DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

(215 views)

www.DataSheet4U.com UNISONIC TECHNOLOGIES CO., LTD L4863 DUAL 2.2W AUDIO AMPLIFIER PLUS STEREO HEADPHONE FUNCTION DESCRIPTION The UTC L4863 is a dual

(204 views)

Allen-Bradley DIN Rail Timing Relays 700-FS High Performance Timing Relays for DIN Rail Mounting Type Designation Allen-Bradley Solid State Relays fo

(198 views)

(192 views)

SCX70R360C6 700V N-Channel Super Junction Power MOSFET GENERAL DESCRIPTION The Power MOSFET is fabricated using advanced super junction technology. Th

(191 views)

600V N-ch Multi-Epi Super-Junction MOSFET General Features  Multi-Epi Process  Proprietary New Super-Junction Technology  RDS(ON),typ.=0.139Ω@VGS=1

(177 views)