NCT Datasheet | Specifications & PDF Download

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SPECIFICATIONS No. STK442-090 1. Case Outline 14Pins (See attached outline drawing) 2. Function class AB 2 channels AF power amplifier 3. Application

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EVALUATION KIT AVAILABLE Click here to ask about the production status of specific part numbers. MAX6675 Cold-Junction-Compensated K-Thermocoupleto

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HCA60R099F Dec 2021 HCA60R099F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HCA60R070F July 2020 HCA60R070F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excell

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HCS80R850S Dec 2019 HCS80R850S 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HCA60R040F Dec 2020 HCA60R040F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. P13009 Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Fluorescent Lamp、E

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LED LN2556 ■ LN2556 ， VFPWM ， 8-100V LED 。 LN2556 160K， PWM ，， 。LN2556 MODE 。MODE ，MODE 1/2 。 ■  LED  RGB LED   ■ LN2556 ①②

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif

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GLASSPASSIVATED J UNCTIONPLASTICRECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere 1N4001G THRU 1N4007G FEATURES * High reliability * Low c

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Unijunction Transistor Description: A PN unijunction transistor in a TO–92 type package designed for use in pulse and timing circuits, sensing circ

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NCE65TF130T N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and

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PHILIPS AD139 MEDIUM POWER P-N-P ALLO/ JUNCTION TRANSISTOR The AD1J9 is a medium power alloy junction transistor of the PHP type designed for an out

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