NE8 Datasheet | Specifications & PDF Download

Features  Enhancement mode  Very low on-resistance  VitoMOS® Ⅱ Technology  100% Avalanche Tested VSM005NE8HS-G 85V/124A N-Channel Advanced Power

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Teccor® brand Thyristors 1 Amp Sensitive & Standard Triacs Lx01Ex & LxNx & Qx01Ex & QxNx Series RoHS Main Features Symbol IT(RMS) VDRM/ VRRM IGT (Q1

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Teccor® brand Thyristors 1 Amp Sensitive & Standard Triacs Lx01Ex & LxNx & Qx01Ex & QxNx Series RoHS Main Features Symbol IT(RMS) VDRM/ VRRM IGT (Q1

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IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)

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NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES • LOW NOISE FIGURE: 1.1 dB at 1 GHz •

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www.DataSheet4U.com IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x

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www.DataSheet4U.com IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R

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SILICON TRANSISTOR NE85619 / 2SC5006 JEITA Part No. NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The NE85619 / 2SC50

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NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATU

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NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES • LOW NOISE FIGURE: 1.1 dB at 1 GHz •

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8023A 8023A MCC Manchester Code Converter TM 92123 Features s Compatible with IEEE 802.3 /Ethernet (10BASE5), IEEE802.3/CHEAPERNET (10BASE2) and Ethe

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SPC58EEx, SPC58NEx 32-bit Power Architecture® microcontroller for automotive ASIL-D applications Datasheet - production data FPBGA292 (17 x 17 x 1.8

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www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NE851M03 FEATURES • NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm pac

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IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)

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IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)

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Teccor® brand Thyristors 1 Amp Sensitive & Standard Triacs Lx01Ex & LxNx & Qx01Ex & QxNx Series RoHS Main Features Symbol IT(RMS) VDRM/ VRRM IGT (Q1

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PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers

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PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers

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